文章基本信息

标题：Highly Linear and Efficient Microwave GaN HEMT Doherty Amplifier for WCDMA
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作者：Lee, Yong-Sub ; Lee, Mun-Woo ; Jeong, Yoon-Ha 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2008
卷号：30
期号：1
页码：158-160
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：A highly linear and efficient GaN HEMT Doherty amplifier for wideband code division multiple access (WCDMA) repeaters is presented. For better performance, the adaptive gate bias control of the peaking amplifier using the power tracking circuit and the shunt capacitors is employed. The measured one-carrier WCDMA results show an adjacent channel leakage ratio of -43.2 dBc at -MHz offset with a power added efficiency of 40.1% at an average output power of 37 dBm, which is a 7.5 dB back-off power from the saturated output power.
关键词：Doherty amplifier;efficiency;gallium nitride (GaN);wideband code division multiple access (WCDMA)