文章基本信息

标题：Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge
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作者：Kim, Tae-Yong ; Kim, Tae-Ki ; Kim, Sang-In 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2008
卷号：30
期号：6
页码：833-843
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：The effect of forward and reverse electrostatic discharge (ESD) on the electro-optical characteristics of oxide vertical-cavity surface-emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD-induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD-induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro-optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.
关键词：Vertical-cavity surface-emitting laser;semiconductor laser;electrostatic discharge;semiconductor device reliability