文章基本信息

标题：Ku-Band Power Amplifier MMIC Chipset with On-Chip Active Gate Bias Circuit
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作者：Noh, Youn-Sub ; Chang, Dong-Pil ; Yom, In-Bok 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2009
卷号：31
期号：3
页码：247-253
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.
关键词：Bias circuit;compensation;driver amplifier;Ku-band;pHEMT;MMIC;power amplifier;supply voltage;temperature;threshold voltage