文章基本信息

标题：Fabrication of Transimpedance Amplifier Module and Post-Amplifier Module for 40 Gb/s Optical Communication Systems
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作者：Lee, Jong-Min ; Min, Byoung-Gue ; Kim, Seong-Il 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2009
卷号：31
期号：6
页码：749-754
DOI：10.4218/etrij.09.1209.0038
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency ( ) of 129 GHz and a maximum oscillation frequency ( ) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 . A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.
关键词：InGaAs/InP HBT;40 Gb/s;transimpedance amplifier;post amplifier;module;package