文章基本信息

标题：Design of Gate-Ground-NMOS-Based ESD Protection Circuits with Low Trigger Voltage, Low Leakage Current, and Fast Turn-On
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作者：Koo, Yong-Seo ; Kim, Kwang-Soo ; Park, Shi-Hong 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2009
卷号：31
期号：6
页码：725-731
DOI：10.4218/etrij.09.1209.0045
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：In this paper, electrostatic discharge (ESD) protection circuits with an advanced substrate-triggered NMOS and a gate-substrate-triggered NMOS are proposed to provide low trigger voltage, low leakage current, and fast turn-on speed. The proposed ESD protection devices are designed using 0.13 CMOS technology. The experimental results show that the proposed substrate-triggered NMOS using a bipolar transistor has a low trigger voltage of 5.98 V and a fast turn-on time of 37 ns. The proposed gate-substrate-triggered NMOS has a lower trigger voltage of 5.35 V and low leakage current of 80 pA.
关键词：ESD protection circuit;GGNMOS;leakage current;turn on