文章基本信息

标题：Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials
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作者：Ryu, Ho-Jun ; Kwon, Se-In ; Cheon, Sang-Hoon 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2009
卷号：31
期号：6
页码：703-708
DOI：10.4218/etrij.09.1209.0014
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.
关键词：Microbolometer;silicon antimony;resistor;noise