文章基本信息

标题：High Repair Efficiency BIRA Algorithm with a Line Fault Scheme
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作者：Han, Tae-Woo ; Jeong, Woo-Sik ; Park, Young-Kyu 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2010
卷号：32
期号：4
页码：642-644
DOI：10.4218/etrij.10.0210.0097
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：With the rapid increase occurring in both the capacity and density of memory products, test and repair issues have become highly challenging. Memory repair is an effective and essential methodology for improving memory yield. An SoC utilizes built-in redundancy analysis (BIRA) with built-in self-test for improving memory yield and reliability. This letter proposes a new heuristic algorithm and new hardware architecture for the BIRA scheme. Experimental results indicate that the proposed algorithm shows near-optimal repair efficiency in combination with low area and time overheads.
关键词：Built-in redundancy analysis (BIRA);memory yield;repair efficiency