文章基本信息

标题：Millimeter-Wave High-Linear CMOS Low-Noise Amplifier Using Multiple-Gate Transistors
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作者：Kim, Ji-Hoon ; Choi, Woo-Yeol ; Quraishi, Abdus Samad 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2011
卷号：33
期号：3
页码：462-465
DOI：10.4218/etrij.11.0210.0235
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：A millimeter-wave (mm-wave) high-linear low-noise amplifier (LNA) is presented using a 0.18 standard CMOS process. To improve the linearity of mm-wave LNAs, we adopted the multiple-gate transistor (MGTR) topology used in the low frequency range. By using an MGTR having a different gate-source bias at the last stage of LNAs, third-order input intercept point (IIP3) and 1-dB gain compression point ( ) increase by 4.85 dBm and 4 dBm, respectively, without noise figure (NF) degradation. At 33 GHz, the proposed LNAs represent 9.5 dB gain, 7.13 dB NF, and 6.25 dBm IIP3.
关键词：Millimeter-wave;low-noise amplifier;MGTR;linearity;0.18 ${\mu}m$ CMOS