文章基本信息

标题：E-Band Wideband MMIC Receiver Using 0.1 ${\mu}m$ GaAs pHEMT Process
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作者：Kim, Bong-Su ; Byun, Woo-Jin ; Kang, Min-Soo 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2012
卷号：34
期号：4
页码：485-491
DOI：10.4218/etrij.12.0111.0644
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：In this paper, the implementations of a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single-chip receiver for 70/80 GHz point-to-point communications are presented. To obtain high-gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five-stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five-stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of -1.5 dBm to 1.5 dBm. Finally, a single-chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of -21 dBm.
关键词：E-band;MMIC;LNA;SHP mixer;receiver