文章基本信息

标题：Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors
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作者：Cheong, Woo-Seok ; Park, Jonghyurk ; Shin, Jae-Heon 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2012
卷号：34
期号：6
页码：966-969
DOI：10.4218/etrij.12.0212.0232
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.
关键词：In-Ga-Zn oxide;IGZO;electrical stability;thin-film transistor;XPS;oxygen binding energy