文章基本信息

标题：Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor
本地全文：下载
作者：Jung, Soon-Won ; Na, Bock Soon ; Baeg, Kang-Jun 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2013
卷号：35
期号：4
页码：734-737
DOI：10.4218/etrij.13.0212.0280
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 , , and A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.
关键词：Inkjet-printing;nonvolatile memory;ferroelectric;p(VDF-TrFE)