文章基本信息

标题：Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side
本地全文：下载
作者：Won, Jongil ; Koo, Jin Gun ; Rhee, Taepok 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2013
卷号：35
期号：4
页码：603-609
DOI：10.4218/etrij.13.1912.0030
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC-IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.
关键词：IGBT;FWD;reverse conduction;RIE;Zener diode