文章基本信息

标题：380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure
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作者：Bae, Sung-Bum ; Kim, Sung-Bok ; Kim, Dong-Churl 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2013
卷号：35
期号：4
页码：566-570
DOI：10.4218/etrij.13.1912.0029
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.
关键词：GaN;UV;LED;MQW;MOCVD