文章基本信息

标题：3-Level Envelope Delta-Sigma Modulation RF Signal Generator for High-Efficiency Transmitters
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作者：Seo, Yongho ; Cho, Youngkyun ; Choi, Seong Gon 等
期刊名称：ETRI Journal
印刷版ISSN：1225-6463
电子版ISSN：2233-7326
出版年度：2014
卷号：36
期号：6
页码：924-930
DOI：10.4218/etrij.14.0114.0176
语种：English
出版社：Electronics and Telecommunications Research Institute
摘要：This paper presents a CMOS 3-level envelope delta-sigma modulation (EDSM) RF signal generator, which synthesizes a 2.6 GHz-centered fully symmetrical 3-level EDSM signal for high-efficiency power amplifier architectures. It consists of an I-Q phase modulator, a Class B wideband buffer, an up-conversion mixer, a D2S, and a Class AB wideband drive amplifier. To preserve fast phase transition in the 3-state envelope level, the wideband buffer has an RLC load and the driver amplifier uses a second-order BPF as its load to provide enough bandwidth. To achieve an accurate 3-state envelope level in the up-mixer output, the LO bias level is optimized. The I-Q phase modulator adopts a modified quadrature passive mixer topology and mitigates the I-Q crosstalk problem using a 50% duty cycle in LO clocks. The fabricated chip provides an average output power of -1.5 dBm and an error vector magnitude (EVM) of 3.89% for 3GPP LTE 64 QAM input signals with a channel bandwidth of 10/20 MHz, as well as consuming 60 mW for both channels from a 1.2 V/2.5 V supply voltage.
关键词：CMOS;envelope delta-sigma modulation; EDSM;power amplifier;polar modulator;RF transmitter;3GPP LTE