文章基本信息

标题：Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS₂
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作者：Zhi Gen Yu ; Yongqing Cai ; Yong-Wei Zhang 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
DOI：10.1038/srep13783
出版社：Springer Nature
摘要：Two-dimensional (2D) transition-metal dichalcogenides (TMDs), most notably, MoS₂ and WS₂, have attracted significant attention due to their sizable and direct bandgap characteristics. Although several interesting MoS₂ and WS₂-based optoelectronic devices have been reported, their processability and reproducibility are limited since their electrical properties are strongly dependent of the number of layers, strain and sample sizes. It is highly desirable to have a robust direct bandgap TMD, which is insensitive to those factors. In this work, using density functional theory, we explore the effects of layer number, strain and ribbon width on the electronic properties of ReS₂, a new member in the TMD family. The calculation results reveal that for monolayer ReS₂, the nature (direct versus indirect) and magnitude of its bandgap are insensitive to strain. Importantly, the predicted bandgap and also charge carrier mobilities are nearly independent of the number of layers. In addition, the direct bandgap of ReS₂ nanoribbons is only weakly dependent on their width. These robust characteristics strongly suggest that ReS₂ has great potential for applications in optoelectronic nanodevices.