文章基本信息

标题：Localized Tail States and Electron Mobility in Amorphous ZnON Thin Film Transistors
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作者：Sungsik Lee ; Arokia Nathan ; Yan Ye 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
DOI：10.1038/srep13467
出版社：Springer Nature
摘要：The density of localized tail states in amorphous ZnON (a-ZnON) thin film transistors (TFTs) is deduced from the measured current-voltage characteristics. The extracted values of tail state density at the conduction band minima (N_tc) and its characteristic energy (kT_t) are about 2 × 10²⁰ cm⁻³eV⁻¹ and 29 meV, respectively, suggesting trap-limited conduction prevails at room temperature. Based on trap-limited conduction theory where these tail state parameters are considered, electron mobility is accurately retrieved using a self-consistent extraction method along with the scaling factor ‘1/(α + 1)’ associated with trapping events at the localized tail states. Additionally, it is found that defects, e.g. oxygen and/or nitrogen vacancies, can be ionized under illumination with hv ≫ E_g, leading to very mild persistent photoconductivity (PPC) in a-ZnON TFTs.