文章基本信息

标题：Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions
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作者：H. M. Yau ; Z. B. Yan ; N. Y. Chan 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
DOI：10.1038/srep12826
出版社：Springer Nature
摘要：Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO₃/La_0.7Sr_0.3MnO₃ with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.