文章基本信息

标题：Current rectifying and resistive switching in high density BiFeO₃ nanocapacitor arrays on Nb-SrTiO₃ substrates
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作者：Lina Zhao ; Zengxing Lu ; Fengyuan Zhang 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
DOI：10.1038/srep09680
出版社：Springer Nature
摘要：Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO₃ nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO₃/SrRuO₃ (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO₃ (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch²) nonvolatile memories and other oxide nanoelectronic devices.