文章基本信息

标题：Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb₂O₅-NaNbO₃ thin films
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作者：Linglong Li ; Lu Lu ; Zhiguang Wang 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
DOI：10.1038/srep09229
出版社：Springer Nature
摘要：Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb₂O₅-NaNbO₃ nanocomposite thin films on SrRuO₃-buffered LaAlO₃ substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.