文章基本信息

标题：Integration of lead-free ferroelectric on HfO₂/Si (100) for high performance non-volatile memory applications
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作者：Souvik Kundu ; Deepam Maurya ; Michael Clavel 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
DOI：10.1038/srep08494
出版社：Springer Nature
摘要：We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO₃-xBa(Cu_1/3Nb_2/3)O₃ (x = 0.025) (BT-BCN) integrated on to HfO₂ buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO₂ and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10⁶ s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.