文章基本信息

标题：Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing
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作者：Fei Zhao ; Huhu Cheng ; Yue Hu 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2014
卷号：4
DOI：10.1038/srep05882
出版社：Springer Nature
摘要：Graphitic carbon nitride nanosheet (g-C₃N₄-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C₃N₄-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C₃N₄-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C₃N₄-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C₃N₄-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 10⁵, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.