文章基本信息

标题：Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
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作者：Z. B. Yan ; J. -M. Liu
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2013
卷号：3
DOI：10.1038/srep02482
出版社：Springer Nature
摘要：The Au/DyMnO₃/Nb:SrTiO₃/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 10⁵ s, and the change ratio of resistance (or capacitance) is larger than 100 over the 10⁸ switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO₃/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO₃/Nb:SrTiO₃ stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device.