文章基本信息

标题：Key concepts behind forming-free resistive switching incorporated with rectifying transport properties
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作者：Yao Shuai ; Xin Ou ; Wenbo Luo 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2013
卷号：3
DOI：10.1038/srep02208
出版社：Springer Nature
摘要：This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO₃/Pt/Ti capacitor-like structures. Polycrystalline BiFeO₃ thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO₂/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600°C. The current-voltage (I–V) curves indicate that resistive switching can only be achieved in Au/BiFeO₃/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO₃ thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits.