文章基本信息

标题：Using a two-contact circular test structure to determine the specific contact resistivity of contacts to bulk semiconductors
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作者：Collins, Aaron M. ; Pan, Yue ; Holland, Anthony S. 等
期刊名称：Facta universitatis - series: Electronics and Energetics
印刷版ISSN：0353-3670
电子版ISSN：2217-5997
出版年度：2015
卷号：28
期号：3
页码：457-464
DOI：10.2298/FUEE1503457C
出版社：University of Niš
摘要：We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3-D) contact structures using a two-electrode test structure. This method was developed using Finite Element Modeling (FEM). Experimental measurements were performed for contacts of 200 nm nickel (Ni) to p+-type germanium (Ge) substrates and 200 nm of Titanium (Ti) on 4H-Silicon Carbide (SiC). The SCR obtained was (2.3-27)×10-6 Ω•cm2 for the Ni-Ge contacts and (1.3-2.4)×10-3 Ω•cm2 for the Ti-SiC.
关键词：Specific contact resistivity; test structures; ohmic contact