文章基本信息

标题：CMOSイメージセンサのための多層配線層における光透過率の解析
本地全文：下载
作者：金允ギョン ; 池田誠 ; 浅田邦博等
期刊名称：映像情報メディア学会誌
印刷版ISSN：1342-6907
电子版ISSN：1881-6908
出版年度：2010
卷号：64
期号：3
页码：419-422
DOI：10.3169/itej.64.419
出版社：The Institute of Image Information and Television Engineers
摘要：With the downscaling of CMOS technology, interconnect layers are multi-stratified since the number of metal levels has increased. However, this multi-metal-layer structure above the photodiodes affects sensitivity, which is important for obtaining optimal performance from CMOS image sensors. This paper analyzes the light-transmission characteristics on multi-metal layers (interconncet layers). To evaluate what effect standard CMOS-process technologies have on multi-metal layers, we developed a method of calculating the transmitted light intensity through the multi-metal layers. We found the transmitted light intensity from the calculated results using the transfer matrix method for standard CMOSs ranging in size from 1.2 μm to 22 nm.
关键词：多層配線層;光透過率;透過マトリックス;イメージセンサ