文章基本信息

标题：電荷増倍型CMOSイメージセンサの増倍特性評価
本地全文：下载
作者：大野俊和 ; 有本護 ; 中島勇人等
期刊名称：映像情報メディア学会誌
印刷版ISSN：1342-6907
电子版ISSN：1881-6908
出版年度：2010
卷号：64
期号：3
页码：347-352
DOI：10.3169/itej.64.347
出版社：The Institute of Image Information and Television Engineers
摘要：A charge multiplication CMOS image sensor was developed that has a 10μm pixel pitch and CIF format. This sensor has an electric charge multiplication electrode unit just behind the photodiode of each pixel, which repeatedly performs impact ionization against a photoelectrically-converted signal charge for the charge multiplication. A prototype sensor was used to evaluate the multiplication characteristics and it showed that the sensor can provide excellent signal amplification control in accordance with the repeated number of impact ionizations and the voltage applied to the charge multiplication electrode. This evaluation also showed that the spatial noise does not increase in relation to the signal amplification. In addition, the sensor yields a clearer image and a significantly higher S/N in a 0.4 lx low-light environment, in comparison with non-multiplying using charge multiplication of approx. 60 times in 100μs.
关键词：CMOSイメージセンサ;インパクトイオン化;電荷増倍;低照度撮像