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  • 标题:高性能Si-薄膜トランジスタの耐圧に及ぼすソース-ドレイン不純物プロファイルの効果
  • 本地全文:下载
  • 作者:Shinzo Tsuboi ; Genshiro Kawachi ; Masahiro Mitani
  • 期刊名称:映像情報メディア学会誌
  • 印刷版ISSN:1342-6907
  • 电子版ISSN:1881-6908
  • 出版年度:2007
  • 卷号:61
  • 期号:9
  • 页码:1320-1325
  • DOI:10.3169/itej.61.1320
  • 出版社:The Institute of Image Information and Television Engineers
  • 摘要:The effects of the source and drain junction depth on breakdown voltage of high-performance Si TFTs have been studied.It is found that decreasing the junction depth results in a substantial increase in the sourcedrain breakdown voltage (VBD).The improvement in VBD is primarily due to suppression of parasitic bipolar gain.Reduced parasitic bipolar gain originates from the suppression of the body potential elevation in the shallow junction structure,that allows for penetration of the excess holes beneath the source n+ region.
  • 关键词:Si TFT;Breakdown Voltage;Shallow Junction;Impact Ionization;Body Potential
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