文章基本信息

标题：2μm画素・2M-MOSイメージセンサ
本地全文：下载
作者：山口琢己 ; 笠野真弘 ; 稲葉雄一等
期刊名称：映像情報メディア学会誌
印刷版ISSN：1342-6907
电子版ISSN：1881-6908
出版年度：2006
卷号：60
期号：3
页码：373-377
DOI：10.3169/itej.60.373
出版社：The Institute of Image Information and Television Engineers
摘要：We have developed a 2.0-μm-pixel-pitch 2M-MOS image sensor. The key technologies that were used to achieve the high sensitivity of the MOS image sensor are a new pixel circuit configuration, a fine design rule of 0.15 μm, and a thin amorphous silicon film color filter. In the new pixel circuit configuration, a unit pixel consists of a photodiode, a transfer transistor, and an amplifier circuit with two transistors that are shared by four pixels. The unit pixel thus has 1.5 transistors. The fine design rule of 0.15 μm enables a 40% reduction in wiring area. As a result, an aperture ratio of 30% is achieved. A new color filter made of amorphous silicon is 1/10 the thickness of a conventional organic pigment color filter and gives rise to highly efficient light collection. The high sensitivity of the image sensor is achieved using these three technologies.
关键词：イメージセンサ;カラーフィルタ;a-Si;画素;感度;トランジスタ;設計ルール