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  • 标题:0.5-V 4-MB Variation-Aware Cache Architecture Using 7T/14T SRAM and Its Testing Scheme
  • 本地全文:下载
  • 作者:Yohei Nakata ; Shunsuke Okumura ; Hiroshi Kawaguchi
  • 期刊名称:Information and Media Technologies
  • 电子版ISSN:1881-0896
  • 出版年度:2012
  • 卷号:7
  • 期号:2
  • 页码:544-555
  • DOI:10.11185/imt.7.544
  • 出版社:Information and Media Technologies Editorial Board
  • 摘要:This paper presents a novel cache architecture using 7T/14T SRAM, which can improve its reliability with control lines dynamically. Our proposed 14T word-enhancing scheme can enhance its operating margin in word granularity by combining two words in a low-voltage mode. Furthermore, we propose a new testing method that maximizes the efficiency of the 14T word-enhancing scheme. In a 65-nm process, it can reduce the minimum operation voltage ( Vmin ) to 0.5V to a level that is 42% and 21% lower, respectively, than those of a conventional 6T SRAM and a cache word-disable scheme. Measurement results show that the 14T word-enhancing scheme can reduce Vmin of the 6T SRAM and 14T dependable modes by 25% and 19%, respectively. The respective dynamic power reductions are 89.2% and 73.9%. The respective total power reductions are 44.8% and 20.9%.
  • 关键词:cache memory;low voltage;low power;process variation;fine-grain control
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