文章基本信息

标题：Patent research front mining of GaN semiconductor based on the LDA model
本地全文：下载
作者：Ruijiao Ma ; Yuntao Zhang ; Jiakuan Chen 等
期刊名称：SHS Web of Conferences
印刷版ISSN：2416-5182
电子版ISSN：2261-2424
出版年度：2022
卷号：140
页码：1-4
DOI：10.1051/shsconf/202214001019
语种：English
出版社：EDP Sciences
摘要：This paper aims to identify and analyze research front topics of GaN semiconductor. The research method was to mine and identify topics based on GaN patent data by using the LDA model and topic intensity index. Finally, through experiments, we obtained and analyzed 4 research front topics. The results provided informatics support for revealing the research status and trend of GaN semiconductor.