文章基本信息

标题：High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction
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作者：Kim Cihyun ; Yoo Tae Jin ; Kwon Min Gyu 等
期刊名称：Nanophotonics
印刷版ISSN：2192-8606
电子版ISSN：2192-8614
出版年度：2022
卷号：11
期号：5
页码：1041-1049
DOI：10.1515/nanoph-2021-0738
语种：English
出版社：Walter de Gruyter GmbH
摘要：The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region to achieve highly sensitive infrared detection capability. The strengthened internal electric field in the split active junctions enabled efficient collection of photocarriers, resulting in a responsivity of 2.02 A W−1 and a specific detectivity of 5.28 × 1010 Jones with reduced dark current and improved external quantum efficiency; these results are more than doubled compared with the responsivity of 0.85 A W−1 and detectivity of 1.69 × 1010 Jones for a single active junction device. The responsivity of the optimized structure is 1.7, 2.7, and 39 times higher than that of previously reported graphene/Ge with Al2O3 interfacial layer, gate-controlled graphene/Ge, and simple graphene/Ge heterostructure photodetectors, respectively.