文章基本信息

标题：Infinite possibilities of ultrathin III-V semiconductors: Starting from synthesis
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作者：Fangyun Lu ; Huiliu Wang ; Mengqi Zeng 等
期刊名称：iScience
印刷版ISSN：2589-0042
出版年度：2022
卷号：25
期号：3
页码：1-14
DOI：10.1016/j.isci.2022.103835
语种：English
出版社：Elsevier
摘要：SummaryUltrathin III-V semiconductors have been receiving tremendous research interest over the past few years. Owing to their exotic structures, excellent physical and chemical properties, ultrathin III-V semiconductors are widely applied in the field of electronics, optoelectronics, and solar energy. However, the strong chemical bonds in layers are the bottleneck of the two-dimensionalization preparation process, which hinders the further development of ultrathin III-V semiconductors. Some effective methods to synthesize ultrathin III-V semiconductors have been reported recently. In this perspective, we briefly introduce the structures and properties of ultrathin III-V semiconductors firstly. Then, we comprehensively summarize the synthetic strategies of ultrathin III-V semiconductors, mainly focusing on space confinement, atomic substitution, adhesion energy regulation, and epitaxial growth. Finally, we summarize the current challenges and propose the development directions of ultrathin III-V semiconductors in the future.Graphical abstractDisplay OmittedSemiconductor manufacturing; Materials synthesis; Nanomaterials