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  • 标题:Author Correction: A quantitative approach for trap analysis between Al 0.25Ga 0.75N and GaN in high electron mobility transistors
  • 本地全文:下载
  • 作者:Walid Amir ; Ju‑Won Shin ; Ki‑Yong Shin
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2021
  • 卷号:11
  • DOI:10.1038/s41598-021-02854-3
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:Correction to: Scientific Reports 10.1038/s41598-021-01768-4, published online 17 November 2021 The original version of this Article contained an error in the Acknowledgments section. “This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP; Ministry of Science, ICT and Future Planning, NRF- 2019R1A2C1009816 and NRF- 2019M3F5A1A01076973) and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2009-0082580).” now reads: “This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP; Ministry of Science, ICT and Future Planning, NRF- 2019R1A2C1009816 and NRF-2019M3F5A1A01076973).” The original Article has been corrected.
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