文章基本信息

标题：Hole doping effect of MoS ₂ via electron capture of He ⁺ ion irradiation
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作者：Sang Wook Han ; Won Seok Yun ; Hyesun Kim 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2021
卷号：11
DOI：10.1038/s41598-021-02932-6
语种：English
出版社：Springer Nature
摘要：Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He + ion irradiation: converting n-type MoS 2 to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He + ion irradiation is valid for supported bilayer MoS 2; however, it is limited at supported monolayer MoS 2 because the charges on the underlying substrates transfer into the monolayer under the current condition for He + ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He + ion irradiation.