文章基本信息

标题：CONTROLLED ELECTRON LEAKAGE IN ELECTRON BLOCKING LAYER FREE InGaN/GaN NANOWIRE LIGHT-EMITTING DIODES
本地全文：下载
作者：Ravi Teja Velpula ; Barsha Jain ; Trupti Ranjan Lenka 等
期刊名称：Facta universitatis - series: Electronics and Energetics
印刷版ISSN：0353-3670
电子版ISSN：2217-5997
出版年度：2021
卷号：34
期号：3
页码：393-400
DOI：10.2298/FUEE2103393V
语种：English
出版社：University of Niš
摘要：In this study, we have proposed and investigated the effect of coupled quantum wells to reduce electron overflow in InGaN/GaN nanowire white color light-emitting diodes. The coupled quantum well before the active region could decrease the thermal velocity, which leads to a reduced electron mean free path. This improves the electron confinement in the active region and mitigates electron overflow in the devices. In addition, coupled quantum well after the active region utilizes the leaked electrons from the active region and contributes to the white light emission. Therefore, the output power and external quantum efficiency of the proposed nanowire LEDs are improved. Moreover, the efficiency droop was negligible up to 900 mA injection current.
关键词：Nanowires; Light-Emitting Diodes; Electron Blocking Layer; Molecular Beam Epitaxy