文章基本信息

标题：A quantitative approach for trap analysis between Al _0.25Ga _0.75N and GaN in high electron mobility transistors
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作者：Walid Amir ; Ju-Won Shin ; Ki-Yong Shin 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2021
卷号：11
DOI：10.1038/s41598-021-01768-4
语种：English
出版社：Springer Nature
摘要：The characteristics of traps between the Al 0.25Ga 0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al 0.25Ga 0.75N/GaN interface as well as the border traps were experimentally analyzed because the Al 0.25Ga 0.75N barrier layer functions as a dielectric owing to its high dielectric constant. The interface trap density D it and border trap density N bt were extracted from a long-channel field-effect transistor (FET), conventionally known as a FATFET structure, via frequency-dependent capacitance–voltage (C–V) and conductance–voltage (G–V) measurements. The minimum D it value extracted by the conventional conductance method was 2.5 × 10 12 cm −2·eV −1, which agreed well with the actual transistor subthreshold swing of around 142 mV·dec −1. The border trap density N bt was also extracted from the frequency-dependent C–V characteristics using the distributed circuit model, and the extracted value was 1.5 × 10 19 cm −3·eV −1. Low-frequency (1/ f) noise measurement provided a clearer picture of the trapping–detrapping phenomena in the Al 0.25Ga 0.75N layer. The value of the border trap density extracted using the carrier-number-fluctuation (CNF) model was 1.3 × 10 19 cm −3·eV −1, which is of a similar level to the extracted value from the distributed circuit model.