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  • 标题:A modeling study on utilizing low temperature sprayed In 2S 3 as the buffer layer of CuBaSn(S, Se) solar cells
  • 本地全文:下载
  • 作者:Maryam Hashemi ; Mehran Minbashi ; Seyed Mohammad Bagher Ghorashi
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2021
  • 卷号:11
  • DOI:10.1038/s41598-021-99012-6
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:This study represents the investigation of In 2S 3 thin films as an electron transport layer in the CuBaSn(S, Se)-CBT(S, Se) solar cells, which have been deposited using the Chemical Spray Pyrolysis method. For studying the electrical properties of films such as conduction and valence band, carrier densities, Fermi level, flat band potential, and semiconductor type, the Mott–Schottky analysis has been used. UV–VIS, XRD, and FESEM have been applied to investigate the optical properties of the layers and the layer’s morphologies. The experimental CBT(S, Se) solar cell has been simulated and validated as the next step. After that, the In 2S 3 layer has been used as the electron transport layer. The results represent that the In 2S 3 layer is a suitable substitution for toxic CdS. Finally, the In 2S 3 properties are varied in reasonable ranges, which means different electron transport layers are screened.
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