文章基本信息

标题：One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
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作者：Sangik Choi ; Jaemin Son ; Kyoungah Cho 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2021
卷号：11
DOI：10.1038/s41598-021-97479-x
语种：English
出版社：Springer Nature
摘要：In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestructive reading characteristics of 10,000 s, and an endurance of 10 8 cycles. The standby power of the individual 1T-SRAM cell was estimated to be 0.7 pW for holding the “0” state and 6 nW for holding the “1” state. For a selected cell in the 2 × 2 1T-SRAM cell array, nondestructive reading of the memory was conducted without any disturbance in the half-selected cells. This immunity to disturbances validated the reliability of the 1T-SRAM cell array.