文章基本信息

标题：Super fine cerium hydroxide abrasives for SiO ₂ film chemical mechanical planarization performing scratch free
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作者：Young-Hye Son ; Gi-Ppeum Jeong ; Pil-Su Kim 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2021
卷号：11
DOI：10.1038/s41598-021-97122-9
语种：English
出版社：Springer Nature
摘要：Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce 4+ precursor, C 3H 4N 2 catalyst, and NaOH titrant for a synthesized termination process at temperature of at temperature of 25 °C. This process overcomes the limitations of chemical–mechanical-planarization (CMP)-induced scratches from conventional dry ceria abrasives with irregular surfaces or wet ceria abrasives with crystalline facets in nanoscale semiconductor devices. The chemical composition of super-fine wet ceria abrasives depends on the synthesis termination pH, that is, Ce(OH) 4 abrasives at a pH of 4.0–5.0 and a mixture of CeO 2 and Ce(OH) 4 abrasives at a pH of 5.5–6.5. The Ce(OH) 4 abrasives demonstrate better abrasive stability in the SiO 2-film CMP slurry than the CeO 2 abrasives and produce a minimum abrasive zeta potential (~ 12 mV) and a minimum secondary abrasive size (~ 130 nm) at the synthesis termination pH of 5.0. Additionally, the abrasive stability of the SiO 2-film CMP slurry that includes super-fine wet ceria abrasives is notably sensitive to the CMP slurry pH; the best abrasive stability (i.e., a minimum secondary abrasive size of ~ 130 nm) is observed at a specific pH (6.0). As a result, a maximum SiO 2-film polishing rate (~ 524 nm/min) is achieved at pH 6.0, and the surface is free of stick-and-slip type scratches.