文章基本信息

标题：Characteristics investigation on 4.5kV IGBT with partially narrow mesa and split-gate
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作者：Xuebing Zhai ; Tong Yang ; Ruliang Zhang 等
期刊名称：E3S Web of Conferences
印刷版ISSN：2267-1242
电子版ISSN：2267-1242
出版年度：2021
卷号：300
页码：1-6
DOI：10.1051/e3sconf/202130001012
语种：English
出版社：EDP Sciences
摘要：Low on-state voltage and low turn-off loss are key issues for IGBT used in HVDC and FACTS. Partial narrow mesa was introduced to improve emitter side contact resistance of IGBT based on Nakagawa limit assumption. However, turn-off loss increases and short circuit sustainability get worse. Split gate separates gate electrode from drift region and reduces gate-collector capacitance to lower turn-off energy loss. Combination partial narrow mesa with split gate can get better gate performance and turn-off characteristics in 4.5kV IGBT. Simulated results with TCAD show proposed models improves switching loss and gate reliability. By adjusting split gap electric filed, split gate shape has an important effect on turn-on characteristics.