文章基本信息

标题：Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting
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作者：Yonghwan Lee ; Bikesh Gupta ; Hark Hoe Tan 等
期刊名称：iScience
印刷版ISSN：2589-0042
出版年度：2021
卷号：24
期号：8
页码：1-16
DOI：10.1016/j.isci.2021.102921
语种：English
出版社：Elsevier
摘要：SummarySilicon (Si) has been widely investigated as a feasible material for photoelectrochemical (PEC) water splitting. Compared to thick wafer-based Si, thin Si (<50 μm thickness) could concurrently minimize the material usage allowing the development of cost-effective and flexible photoelectrodes for integrable PEC cells. This work presents the design and fabrication of thin Si using crack-assisted layer exfoliation method through detailed optical simulations and a systematic investigation of the exfoliation method. Thin free-standing Si photoanodes with sub-50 μm thickness are demonstrated by incorporating a nickel oxide (NiOx) thin film as oxygen evolution catalyst, light-trapping surface structure, and a rear-pn+junction, to generate a photo-current density of 23.43 mA/cm2with an onset potential of 1.2 V (vs. RHE). Our work offers a general approach for the development of efficient and cost-effective photoelectrodes with Si films with important implications for flexible and wearable Si-based photovoltaics and (opto)electronic devices.Graphical abstractDisplay OmittedHighlights•Design and fabrication of thin Si photoanode using crack-assisted layer exfoliation•A systematic investigation of the crack-assisted layer exfoliation method•Optical simulation on the dependence of photoelectrochemical performance on Si thickness•Demonstration of thin Si photoanode with notable photoelectrochemical performanceChemistry; Electrochemistry; Electrochemical energy conversion; Materials science; Materials application; Energy materials