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  • 标题:Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
  • 本地全文:下载
  • 作者:Anas Kamarundzaman ; Ahmad Shuhaimi Abu Bakar ; Adreen Azman
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2021
  • 卷号:11
  • DOI:10.1038/s41598-021-89201-8
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:We demonstrated high-quality single crystalline a-plane undoped-gallium nitride grown on a nonpatterned r-plane sapphire substrate via metal–organic chemical vapor deposition. The effect of four different numbers of sandwiched strain-periodic AlN/GaN multilayers on the strain state, crystal quality, optical and electrical properties was investigated. Field emission scanning electron microscopy and atomic force microscopy showed that the surface morphology was improved upon insertion of 120 pairs of AlN/GaN thin layers with a root-mean-square roughness of 2.15 nm. On-axis X-ray ω-scan rocking curves showed enhanced crystalline quality: the full width at half maximum decreased from 1224 to 756 arcsec along the [0001
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