文章基本信息

标题：Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications
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作者：Thilini K. Ekanayaka ; Guanhua Hao ; Aaron Mosey 等
期刊名称：Maine Policy Review
印刷版ISSN：2312-7481
出版年度：2021
卷号：7
期号：3
页码：37
DOI：10.3390/magnetochemistry7030037
语种：English
出版社：The University of Maine
摘要：Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)