文章基本信息

标题：Recent Advances in Super Broad Infrared Luminescence Bismuth-Doped Crystals
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作者：Puxian Xiong ; Yuanyuan Li ; Mingying Peng 等
期刊名称：iScience
印刷版ISSN：2589-0042
出版年度：2020
卷号：23
期号：10
页码：1-26
DOI：10.1016/j.isci.2020.101578
语种：English
出版社：Elsevier
摘要：SummaryBismuth (Bi)-doped materials are capable of exhibiting broadband near-infrared (NIR) luminescence in 1,000–1,700 nm; driven by the potential use in lasers and broadband optical amplifiers for modern fiber communication systems, Bi-activated NIR luminescencent glasses and related devices have attracted much attention. Compared with glass systems, Bi-doped crystals as gain media usually have more regular crystal structures to produce stronger NIR signals, and developing such materials is highly desirable. Regarding the recent advances in Bi-doped NIR crystals, here, for the first time, we summarized such crystals listed as two main categories of halogen and oxide compounds. Then, by comparing the substitution site, coordination environment, emission and excitation luminescence peaks, emitting center species, and decay times of these known Bibased NIR crystals, discussion on how to design Bi-doped NIR crystals is included. Finally, the key challenges and perspectives of Bi-doped NIR crystals are also presented. It is hoped that this review could offer inspiration for the further development of Bi-doped NIR luminescent crystals and exploit its potential applications.Graphical AbstractDisplay OmittedOptical Materials; Photonics; Materials Design