文章基本信息

标题：Study the Effects of Photon Radiation on Power MOSFET for Harsh Environment Application
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作者：Erman Azwan ; Ramani Kannan ; Lini Lee 等
期刊名称：MATEC Web of Conferences
电子版ISSN：2261-236X
出版年度：2018
卷号：225
页码：1-6
DOI：10.1051/matecconf/201822505013
语种：English
出版社：EDP Sciences
摘要：The rapid growth of the advanced technologies in power electronics system gives a challenge to the electronic device to sustain with the modern technologies nowadays. The challenges are also including the place where the system was installed for example the application in the harsh environment. Harsh environment application requires an electronic device deals with radiation pollution. Hence, the electronic device will suffer from this phenomenon and make the whole system to malfunction and break down. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is one type of electronic device that is the most broadly for high voltage and high switching speed application. The aim of this paper is to studies the photon radiation effect toward the Power MOSFET performance. The study focus on the changing of the electrical characteristics of the device after radiated with photon radiation. Process simulation and Device simulation tools in Sentaurus Synopsys Software used for the research to validate all the theory.