文章基本信息

标题：Design Issues for NEM-Relay-Based SRAM Devices
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作者：Sebastià A. Bota ; Jaume Verd ; Xavier Gili 等
期刊名称：MATEC Web of Conferences
电子版ISSN：2261-236X
出版年度：2018
卷号：210
DOI：10.1051/matecconf/201821001005
语种：English
出版社：EDP Sciences
摘要：We analyze the design constraints of six transistor SRAM cells that arise when using nanoelectromechanical relays. Comparisons are performed between a CMOS 6T conventional SRAM cell and various hybrid memory cells built by replacing a selection of MOSFET transistors with NEM relays. Impact on important memory cell parameters such as various reliability metrics like static noise margin and write noise margin and power consumption are evaluated from circuit simulations using a Verilog-A compact model of the nanomechanical relay. We found that the use of relays involve a new challenge in the design of SRAM hybrid devices as the readability and writeability of the resulting cells manifests a strong dependence with the value of the contact resistance of the NEM relay, a parameter that can experience important variations with the continued operation of the device.