文章基本信息

标题：Comparison of bulk FinFET and SOI FinFET
本地全文：下载
作者：Ying-Yu Chen ; Yu-Hsien Lin
期刊名称：MATEC Web of Conferences
电子版ISSN：2261-236X
出版年度：2018
卷号：201
DOI：10.1051/matecconf/201820102009
语种：English
出版社：EDP Sciences
摘要：In this study, we compare the differences and advantages between Bulk FinFET and SOI FinFET. The results are simulated by using the ISE TCAD software. By changing the parameters of the gate voltage, drain voltage and gate length to analysis which characteristic is better. Through the experiment results, we demonstrate that the SOI FinFET have the better characteristics than bulk FinFET[1].