文章基本信息

标题：Preparation and Performance of Gallium Nitride Powders with Preferred Orientation
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作者：Liping Kang ; Lingli Wang ; Haiyan Wang 等
期刊名称：MATEC Web of Conferences
电子版ISSN：2261-236X
出版年度：2018
卷号：142
DOI：10.1051/matecconf/201814201009
语种：English
出版社：EDP Sciences
摘要：The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K). Because of the solid-state reaction process that the gallium oxide transformed to GaN through solid-state gallium oxynitrides (GaOxNy) as inter-mediates, the Gallium nitride powders which are agglomerates of tens nanometers flake crystallites retain the rod shape and grain size of raw gallium oxide and have slight (002) plane preferred orientation. The near-edge emission of Gallium nitride at 346 nm has a blue shift of 187 meV attributed to a decrease in disorder of the material that is decided by the (002) plane preferred orientation. The preferred orientation and a blue shift have some kind of reference significance to single crystal growth.