期刊名称:Proceedings of the National Academy of Sciences
印刷版ISSN:0027-8424
电子版ISSN:1091-6490
出版年度:2015
卷号:112
期号:17
页码:5280-5285
DOI:10.1073/pnas.1418049112
语种:English
出版社:The National Academy of Sciences of the United States of America
摘要:SignificanceControl and optimization of interaction between light and single quantum emitters are a crucial issue for cavity quantum electrodynamics studies and quantum information science. Although considerable efforts have been made, reliable and reproducible coupling between quantum emitter and cavity mode still remains a grand challenge due to the uncertainty of the size, i.e., the emission wavelength, and position of the quantum emitter. Here, we demonstrate an unprecedented approach of the self-aligned deterministic coupling of single quantum dots (QDs) to nanofocused plasmonic modes on an entire wafer. Spatial precision is better than any nanopositioning techniques, and almost all processed QDs exhibit outstanding spontaneous emission rate enhancement. This reliable approach eliminates a major obstacle in the implementation of practical solid-state quantum emitters. The quantum plasmonics field has emerged and been growing increasingly, including study of single emitter-light coupling using plasmonic system and scalable quantum plasmonic circuit. This offers opportunity for the quantum control of light with compact device footprint. However, coupling of a single emitter to highly localized plasmonic mode with nanoscale precision remains an important challenge. Today, the spatial overlap between metallic structure and single emitter mostly relies either on chance or on advanced nanopositioning control. Here, we demonstrate deterministic coupling between three-dimensionally nanofocused plasmonic modes and single quantum dots (QDs) without any positioning for single QDs. By depositing a thin silver layer on a site-controlled pyramid QD wafer, three-dimensional plasmonic nanofocusing on each QD at the pyramid apex is geometrically achieved through the silver-coated pyramid facets. Enhancement of the QD spontaneous emission rate as high as 22 {+/-} 16 is measured for all processed QDs emitting over [~]150-meV spectral range. This approach could apply to high fabrication yield on-chip devices for wide application fields, e.g., high-efficiency light-emitting devices and quantum information processing.