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  • 标题:Experimental Scanning Laser Lithography with Exposure Optimization
  • 本地全文:下载
  • 作者:Andrew J. Fleming ; Omid T. Ghalehbeygi ; Ben S. Routley
  • 期刊名称:IFAC PapersOnLine
  • 印刷版ISSN:2405-8963
  • 出版年度:2017
  • 卷号:50
  • 期号:1
  • 页码:8662-8667
  • DOI:10.1016/j.ifacol.2017.08.1524
  • 语种:English
  • 出版社:Elsevier
  • 摘要:AbstractLaser scanning lithography is a maskless method for exposing films of photoresist during semiconductor manufacturing. In this method a focused beam is scanned over a surface with varying intensity to create features in the photoresist. Given the shape of a desired feature, an exposure pattern must be found that approximates this shape in the developed photoresist. This can be cast as an optimization problem, which is complicated by the non-negative nature of the exposure function and the non-linear photochemistry of the film. In this article, a nonlinear programming approach is described that results in a tractable optimization problem which accounts for all of the practical constraints encountered in laser scanning lithography. This method is demonstrated to create a sub-wavelength feature which is verified by optical finite element simulation with a resolution of 20 nm.
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